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Part Name(s) : NTE-DRAM
NTE Electronics
NTE Electronics
Description : MICROPROCESSOR & MEMORY CIRCUITS
Description : 256K x 1 DRAM
Description : 256K x 1 DRAM
Zentrum Mikroelektronik Dresden AG
Zentrum Mikroelektronik Dresden AG
Description : 256K x 1 DRAM
Description : 256K × 16-Bit EDO-DRAM
Description : Nonvolatile Read/Write Cartridge
Description : 5V 256K×16 CMOS DRAM (EDO)
Description : 5V 256K×16 CMOS DRAM (EDO)
Description : 256K x 4-bit CMOS DRAM
Description : 256K x 4-bit CMOS DRAM
Hynix Semiconductor
Hynix Semiconductor
Description : 256K x 4-bit CMOS DRAM
Utron Technology Inc
Utron Technology Inc
Description : 256K X 16 BIT EDO DRAM
Description : 256K WORD X 16 BIT EDO DRAM
Description : 3.3V 256K X 16 CMOS DRAM (EDO)
Description : 256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
Description : 256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
Description : 5V 256K X 16 CMOS DRAM (Fast Page Mode)
Description : 5V 256K X 16 CMOS DRAM (Fast Page Mode)
SANYO -> Panasonic
SANYO -> Panasonic
Description : 256K (65536 words X 4 bits) DRAM Fast Page Mode
Description : 3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
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